1. Overview
- The Phoenix® system is engineered for high throughput and maximum uptime in any fabrication environment, from pilot production to industrial-grade manufacturing.
- Technologists and researchers rely on the Phoenix® for repeatable, highly accurate film deposition on flat and 3D substrates alike.
- And with support for up to six individual precursor lines, the Phoenix® delivers solid, liquid, or gaseous process chemistries depending on your thin film needs.
- A compact footprint and innovative design make the Phoenix® the practical choice for those with batch production ALD requirements.
2. Key features include:
- Precise software control of process parameters, including temperature, flow, and pressure, for defect-free coatings on even the most sensitive substrates
- Patented ALD Shield™ vapor trap to prevent the build-up of deposits and minimizes excess process gases from being exhausted into the environment
- Large process chamber accepts GEN 2.5 substrates, multiple wafer cassettes, and larger 3D objects
- Low cost of ownership with minimal startup and operational costs
- Compact footprint that conserves valuable cleanroom space
- Standard recipes and ALD materials readily available
- Comprehensive support and services worldwide from the technical team and PhD scientists
- CE, FCC, and CSA compliant with many built-in safety features
3. Technical specifications
| Substrate Size | Up to 370 mm x 470 mm (Gen 2.5 Panels) Up to 360 wafers – 100 mm (cassette) Up to 160 wafers – 150 mm (cassette) Up to 100 wafers – 200 mm (cassette) Up to 40 wafers – 300 mm (cassette) Custom holders for 3D objects |
| Dimensions (W x L x H) | 900 mm x 1370 mm x 1700 mm |
| Cabinet | Vented cabinet with smoke detection |
| Power | 208 VAC 3 Phase, 8500 W (excluding pump) |
| Control | Windows™ PC |
| Substrate Temperature | Up to 285º C |
| Deposition Uniformity (AI203) | ≤2% |
| Vacuum Pump | Dry pump ≥350 CFM |
| Compatibility | Cleanroom compatible |
| Precursor Delivery System | Standard 4 lines accommodate solid, liquid and gas precursors Lines independently heated up to 200°C |
| Valves | High speed ALD valves |
| Precursor Cylinders | 3.1 l or 600ml cylinders |
| Carrier/Venting Gas | N2 or Ar MFC flow control |
| Chamber Volume (L x W x H) | (50cm, 40cm,24cm) |
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